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Double-step resistive superconducting transitions of indium and gallium in porous glass

Identifieur interne : 000A72 ( Russie/Analysis ); précédent : 000A71; suivant : 000A73

Double-step resistive superconducting transitions of indium and gallium in porous glass

Auteurs : RBID : Pascal:00-0246023

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Abstract

We studied indium and gallium in porous glass by resistance and magnetization measurements. For indium in porous glass, a very sharp superconducting transition is observed at T1=4.0±0.05K. When a 1.5 T magnetic field is applied, there is a second transition at T2∼3.5K. At 3.5 K, the field dependence of resistance R(H) indicates two transitions at Hcu∼1.4 and Hcl∼0.4T separated by a plateau. For indium in porous glass, the origins of two-step transitions in R(T) and R(H) might be the same. At Hcu (or T1) the individual grains of indium in porous glass become superconductors and at Hcl (or T2) all grains are coupled. For gallium in porous glass, two superconducting transitions of R(T) at T1=7.0 and T2=6.3K are observed. Between 6.35 and 6.30 K, R(T) increases sharply with decreasing temperature. The quasiparticle tunneling or the conductor-superconductor-conductor coupling might cause the sharp rise in resistance between 6.35 and 6.30 K. At 6 K, there are two transitions at Hcu=2.1T and Hcl=1.1T in the R(H) for gallium in porous glass. The two different transitions of R(H) might be caused by a filamentary internal structure of gallium crystallites. There is no diamagnetism at T1. The magnetic transition temperature TM at 3, 4, 5, 6, and 7 T are measured; for all the cases, TM2.

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Pascal:00-0246023

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<div type="abstract" xml:lang="en">We studied indium and gallium in porous glass by resistance and magnetization measurements. For indium in porous glass, a very sharp superconducting transition is observed at T
<sub>1</sub>
=4.0±0.05K. When a 1.5 T magnetic field is applied, there is a second transition at T
<sub>2</sub>
∼3.5K. At 3.5 K, the field dependence of resistance R(H) indicates two transitions at H
<sub>c</sub>
<sup>u</sup>
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<sub>c</sub>
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∼0.4T separated by a plateau. For indium in porous glass, the origins of two-step transitions in R(T) and R(H) might be the same. At H
<sub>c</sub>
<sup>u</sup>
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<sub>1</sub>
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<sub>c</sub>
<sup>l</sup>
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<sub>2</sub>
) all grains are coupled. For gallium in porous glass, two superconducting transitions of R(T) at T
<sub>1</sub>
=7.0 and T
<sub>2</sub>
=6.3K are observed. Between 6.35 and 6.30 K, R(T) increases sharply with decreasing temperature. The quasiparticle tunneling or the conductor-superconductor-conductor coupling might cause the sharp rise in resistance between 6.35 and 6.30 K. At 6 K, there are two transitions at H
<sub>c</sub>
<sup>u</sup>
=2.1T and H
<sub>c</sub>
<sup>l</sup>
=1.1T in the R(H) for gallium in porous glass. The two different transitions of R(H) might be caused by a filamentary internal structure of gallium crystallites. There is no diamagnetism at T
<sub>1</sub>
. The magnetic transition temperature T
<sub>M</sub>
at 3, 4, 5, 6, and 7 T are measured; for all the cases, T
<sub>M</sub>
<sub>2</sub>
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<sub>1</sub>
=4.0±0.05K. When a 1.5 T magnetic field is applied, there is a second transition at T
<sub>2</sub>
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<sub>c</sub>
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<sub>c</sub>
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<sub>1</sub>
) the individual grains of indium in porous glass become superconductors and at H
<sub>c</sub>
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<sub>1</sub>
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<sub>c</sub>
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